Experimental Review of Graphene

Table 2

Comparison between the electronic properties of graphene and common bulk semiconductors. Energy band gap (𝐸_𝑔), electron effective mass (𝑚^∗/𝑚_𝑒), electron mobility (𝜇_𝑒), and electron saturation velocity (𝜈_𝑠𝑎𝑡) of graphene are compared to those of conventional semiconductors and AlGaN/GaN 2DEG [7].

Property	Si	Ge	GaAs	2DEG	Graphene
𝐸𝑔 at 300 K (eV)	1.1	0.67	1.43	3.3	0
𝑚^∗/𝑚𝑒	1.08	0.55	0.067	0.19	0
𝜇𝑒 at 300 K (cm^2V^−1s^−1)	1350	3900	4600	1500–2000	~2 × 10^5
𝜈sat(10^7 cm/s)	1	0.6	2	3	~4