About this Journal Submit a Manuscript Table of Contents
ISRN Nanotechnology
Volume 2012 (2012), Article ID 617214, 10 pages
http://dx.doi.org/10.5402/2012/617214
Research Article

Development of Quantum Simulator for Emerging Nanoelectronics Devices

Ho Chi Minh City University of Science, 227 Nguyen Van Cu Street, District 5, Ho Chi Minh City, Vietnam

Received 5 April 2012; Accepted 21 June 2012

Academic Editors: B. Coasne, G. A. Kachurin, D. K. Sarker, and D. Tsoukalas

Copyright © 2012 Dinh Sy Hien. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.