Development of Quantum Simulator for Emerging Nanoelectronics Devices

<table>A generic transistor comprised of a device channel connected to source and drain contacts. The source-drain current is modulated by a third electrode, the gate. The quantities involved in NEGF formalism are also shown. </table>

International Scholarly Research Notices

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Figure 1

Figure 1: Development of Quantum Simulator for Emerging Nanoelectronics Devices 