Development of Quantum Simulator for Emerging Nanoelectronics Devices

<table>Three-dimensional simulations of <svg height="14.35" id="M104" style="vertical-align:-3.22282pt" version="1.1" viewbox="0 0 24.762501 14.35" width="24.762501" xmlns="http://www.w3.org/2000/svg">
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</svg> characteristics of CNTFETs having the length of 20 nm: (a) planar CNTFET, (b) coaxial CNTFET. </table>

International Scholarly Research Notices

fig10

Figure 10

Figure 10: Development of Quantum Simulator for Emerging Nanoelectronics Devices 