617214.fig.0014
Figure 14: Typical 𝐼 𝐷 - 𝑉 𝐷 characteristics of spin FET simulated by the simulator NEMO-VN2 for various values of 𝑉 𝑔 = 0.1 V, 0.2 V and 0.3 V at room temperature, 𝑇 = 300 K. The spin FET device parameters are material, GaAs, 𝐿 𝐺 = 20 nm, and the gate thickness is 1 nm.