Development of Quantum Simulator for Emerging Nanoelectronics Devices

Figure 5

Typical 𝐼_𝐷-𝑉_𝐺 characteristics (Coulomb oscillations) of SET simulated by the simulator NEMO-VN2 for various values of 𝑉_𝐷 = 50 mV, 100 mV, and 200 mV at room temperature, 𝑇 = 300 K. The SET device parameters are 𝐿 = 10 nm, 𝐶_𝐺 = 𝐶_𝑆 = 𝐶_𝐷 = 1 aF, and 𝑅_𝑆 = 𝑅_𝐷 = 1 MΩ.