617214.fig.005
Figure 5: Typical 𝐼 𝐷 - 𝑉 𝐺 characteristics (Coulomb oscillations) of SET simulated by the simulator NEMO-VN2 for various values of 𝑉 𝐷 = 50 mV, 100 mV, and 200 mV at room temperature, 𝑇 = 300 K. The SET device parameters are 𝐿 = 10 nm, 𝐶 𝐺 = 𝐶 𝑆 = 𝐶 𝐷 = 1 aF, and 𝑅 𝑆 = 𝑅 𝐷 = 1 MΩ.