617214.fig.006
Figure 6: 𝐼 𝐷 - 𝑉 𝐷 characteristics simulated by the simulator at room temperature for various values of 𝑉 𝐺 = 0 mV and 𝑉 𝐺 = e/2 𝐶 𝐺 . The SET device parameters are 𝐿 = 10 nm, 𝐶 𝐺 = 𝐶 𝑆 = 𝐶 𝐷 = 1 aF, and 𝑅 𝑆 = 𝑅 𝐷 = 1 MΩ.