Development of Quantum Simulator for Emerging Nanoelectronics Devices

<table><svg height="14.35" id="M94" style="vertical-align:-3.22282pt" version="1.1" viewbox="0 0 24.762501 14.35" width="24.762501" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.35)">
<g transform="translate(72,-60.52)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝐼</tspan>
</text>
<text transform="matrix(1,0,0,-1,-65.95,60.66)">
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<tspan style="font-size: 8.75px; " x="6.9140801" y="0">𝑆</tspan>
</text>
</g>
</g>
</svg>-<svg height="14.35" id="M95" style="vertical-align:-3.22282pt" version="1.1" viewbox="0 0 26.25 14.35" width="26.25" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.35)">
<g transform="translate(72,-60.52)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝑉</tspan>
</text>
<text transform="matrix(1,0,0,-1,-64.76,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝐷</tspan>
<tspan style="font-size: 8.75px; " x="6.9140801" y="0">𝑆</tspan>
</text>
</g>
</g>
</svg> characteristics of (a) planar and (b) coaxial CNTFETs having the length of 20 nm under ballistic transport (red colour), with scattering (green colour) at various gate biases in the range from 0.4 to 0.7 V in the step of 0.1 V. The bottom and top curves are at the gate voltages of 0.4 V and 0.7 V, respectively. </table>

International Scholarly Research Notices

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Figure 8

Figure 8: Development of Quantum Simulator for Emerging Nanoelectronics Devices 