Development of Quantum Simulator for Emerging Nanoelectronics Devices

<table>The length dependence of <svg height="14.35" id="M99" style="vertical-align:-3.22282pt" version="1.1" viewbox="0 0 24.762501 14.35" width="24.762501" xmlns="http://www.w3.org/2000/svg">
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</svg>-<svg height="14.35" id="M100" style="vertical-align:-3.22282pt" version="1.1" viewbox="0 0 26.25 14.35" width="26.25" xmlns="http://www.w3.org/2000/svg">
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</svg> results for the (19, 0) CNTFETs under phonon scattering: (a) planar CNTFETs; (b) coaxial CNTFETs. The lengths of CNTFETs are of 15, 10, 5, and 2.5 nm from top to bottom curves. </table>

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fig9

Figure 9

Figure 9: Development of Quantum Simulator for Emerging Nanoelectronics Devices 