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ISRN Nanotechnology
Volume 2012 (2012), Article ID 705803, 4 pages
http://dx.doi.org/10.5402/2012/705803
Research Article

Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia

Received 12 April 2012; Accepted 27 June 2012

Academic Editors: K. S. Coleman and C.-L. Hsu

Copyright © 2012 Dewei Chu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

High quality Co-doped ZnO films were prepared with electrodeposition. The correlation among the surface morphology, lattice structure, Co-dopant distribution, and resistance switching properties of the as-deposited films were investigated. It is found that resistance switching behaviour could be manipulated by controlling the composition of Co in the ZnO films. The significant enhancement of resistance switching was achieved with 5 at% Co doping in the films, and the possible switching mechanism was also discussed.