Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

Figure 2

AFM image of Si(100) with a resistivity of 100 Ohm⋅cm after 10 minutes etching in solution—H₂O₂/H₂O/HF = 10/80/40. Ag particles were deposited before etching in solution 0.23 M HF and 5 × 10⁻⁵ M AgNO₃ within 1 min.