Research Article
Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser
Table 2
Laser bar structure layers specification.
| Number | Layers | Function | Thickness (A) | Doping (cm−3) |
| 1 | P contact Au/Ti/Pt | Contact | 3000 | — | 2 |
SiO2 | Dielectric | 1300 | — | 3 | p-GaAs | Contacting | 2500 | (3–15) × 1018 | 4 | p-Al0.15Ga0.35In0.5P | Cladding | 12000 | 2 × 1018 | 5 | Ga0.17In0.83P | SCH | 4500 | 5 × 1017 | 6 | GaAs0.81P0.19 | QW | 160 | | 7 | Ga0.17In0.83P | SCH | 4500 | 5 × 1017 | 8 | n-Al0.15Ga0.35In0.5P | Cladding | 12000 | 2 × 1018 | 9 | n-GaInP | Buffer | 4000 | 2 × 1018 | 10 | n-GaAs | Substrate | 110000 | 2.2 × 1018 | 11 | N contact Au/Ge/Ni | Contact | 4000 | — |
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