Texture of GaAs Nanoparticles Deposited by Pulsed Laser Ablation in Different Atmospheres
Figure 2
GISAXS intensity pattern for He (1 mbar) assisted PLD of GaAs. The number of pulses is increasing from top to bottom, that is, (a) 100, (b) 500, and (c) 1000. The left side of each image represents the measured intensity, while the right side is the result of numerical fitting.
