Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Figure 8

(a) Scheme of the ion irradiation geometry of a 4H-SiC Schottky diode; (b) Ionization curves relevant to 0.7, 0.9, 1.1, and 1.9 MeV H⁺ ions in 4H-SiC; (c) charge collection efficiency maps. For details, see [87].

(a)

(b)

(c)