Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy
Figure 9
(a) Scheme of the experimental setup for angle-resolved IBIC experiment on a 4H-SiC Schottky diode. (b) Bragg’s curves relevant to the ionisation energy profiles of 2 MeV protons incident at different angles in 4H-SiC as evaluated by the SRIM2003 computer code. (c) Charge collection efficiency as function of reverse bias voltage at different angle of incidence; the continuous lines are the theoretical curves from the diffusion-drift model. Reprinted from [88] with permission from Elsevier.
