Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

Figure 1

FESEM pictures for four representative GaN films deposited at 𝑇_𝑠: (a) 473 K, (b) 673 K (inset shows the variation of grain size with substrate temperature), (c) 723 K (inset shows the corresponding XRD trace), and (d) 873 K (inset shows the corresponding grain size distribution).

(a)

(b)

(c)

(d)