Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

Figure 3

PL spectra for films deposited at (a) 473 K and (b) 873 K, (c) transmittance (𝑇_𝑟) spectra, and (d) plots of (𝛼ℎ𝜈)²  versus ℎ𝜈 for a representative GaN film deposited at 873 K. Inset of (c) shows variation of band gap (𝐸_𝑔) with substrate temperature (𝑇_𝑠) and inset of (d) shows the plot of ln(𝛼ℎ𝜈) versus ln(ℎ𝜈−𝐸_𝑔).

(a)

(b)

(c)

(d)