Research Article

IMPATT Diodes Based on , , and Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

Figure 6

Admittance characteristics of (a) 35 GHz, (b) 94 GHz, (c) 140 GHz, and (d) 220 GHz DDR IMPATTs based on , , and oriented GaAs.
(a)
(b)
(c)
(d)