IMPATT Diodes Based on , , and Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

Table 2

Electron and hole ionization rate constants for , , and oriented GaAs [13].

Carrier	(×10^7 m^−1), (×10^7 V m^−1) and	Crystal orientation
		Electrons		0.776	0.912	219.000
	4.450		4.770	29.500
	6.910		3.480	1.000
Holes		63.100	34.700	34.700
		23.100	21.800	22.700
		1.000	1.000	1.000