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International Scholarly Research Notices
Table of Contents
International Scholarly Research Notices
/
2015
/
Article
/
Tab 2
/
Research Article
IMPATT Diodes Based on
,
, and
Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows
Table 2
Electron and hole ionization rate constants for
,
, and
oriented GaAs [
13
].
Carrier
(×10
7
m
−1
),
(×10
7
V m
−1
) and
Crystal orientation
Electrons
0.776
0.912
219.000
4.450
4.770
29.500
6.910
3.480
1.000
Holes
63.100
34.700
34.700
23.100
21.800
22.700
1.000
1.000
1.000