IMPATT Diodes Based on , , and Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

Table 3

Static parameters of 35, 94, 140, and 220 GHz DDR IMPATTs based on , , and oriented GaAs.

(GHz)	Crystal orientation	(×10^8 A m^−2)	(×10^7 V m^−1)	(V)	(V)	(%)	(μm)	(%)
35		0.85	4.6622	45.69	21.14	53.73	0.536	33.92
		0.85	4.7048	46.51	25.35	45.49	0.648	41.01
		0.85	4.7423	47.37	26.41	44.25	0.670	42.41
94		5.60	5.4736	22.26	11.48	48.45	0.254	36.29
		5.60	5.7099	23.45	14.20	39.43	0.312	44.57
		5.60	5.5628	22.82	13.16	42.35	0.292	41.71
140		10.20	6.4306	12.71	7.57	40.44	0.146	32.44
		10.20	6.8431	14.24	9.22	35.27	0.172	38.22
		10.20	6.3306	12.28	7.26	43.32	0.140	31.11
220		22.45	7.5306	8.38	5.61	33.03	0.094	32.41
		22.45	8.1556	9.63	6.89	28.45	0.110	37.93
		22.45	7.0806	8.16	4.76	39.43	0.082	28.27