IMPATT Diodes Based on , , and Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

Table 4

L-S parameters of 35, 94, 140, and 220 GHz DDR IMPATTs based on , , and oriented GaAs.  

(GHz)	Crystal orientation	(GHz)	(GHz)	(×10^7 S m^−2)	(×10^7 S m^−2)	/)	(×10^−9 Ω m^2)	(mW)	(%)
35		22.91	35.29		0.7160	2.96	42.32	1498.50	16.24
		20.43	34.94		0.7475	3.67	33.95	1309.20	13.94
		19.92	34.80		0.7514	3.89	32.07	1286.10	13.44
94		70.08	94.00		3.8847	1.88	10.67	1230.60	10.26
		61.78	94.24		4.2898	2.66	7.68	1066.00	8.44
		64.88	95.13		4.2225	2.38	8.44	1107.60	9.01
140		107.50	139.99		8.7317	1.64	5.09	526.40	8.27
		94.00	139.25		9.6815	2.46	3.61	490.60	6.88
		107.91	139.13		8.5827	1.42	5.49	578.84	9.25
220		169.77	221.00		21.3811	1.65	2.08	358.00	1.11
		147.79	217.57		23.3634	2.54	1.46	335.00	1.02
		180.17	218.14		19.2157	1.26	2.53	397.90	1.19