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Journal of Atomic, Molecular, and Optical Physics
Volume 2011 (2011), Article ID 270540, 7 pages
http://dx.doi.org/10.1155/2011/270540
Research Article

Bandgap Engineering in ZnO By Doping with 3d Transition Metal Ions

1Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025, India
2Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan

Received 6 November 2010; Accepted 21 February 2011

Academic Editor: Robert Moshammer

Copyright © 2011 D. Paul Joseph and C. Venkateswaran. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

D. Paul Joseph and C. Venkateswaran, “Bandgap Engineering in ZnO By Doping with 3d Transition Metal Ions,” Journal of Atomic, Molecular, and Optical Physics, vol. 2011, Article ID 270540, 7 pages, 2011. doi:10.1155/2011/270540