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Journal of Atomic, Molecular, and Optical Physics
Volume 2012 (2012), Article ID 925278, 14 pages
The Activation-Relaxation Technique: ART Nouveau and Kinetic ART
1Département de physique and RQMP, Université de Montréal, P.O. Box 6128, Succursale Centre-Ville, Montréal, QC, Canada H3C 3J7
2Science Program, Texas A&M at Qatar, Texas A&M Engineering Building, Education City, Doha, Qatar
3Nanosciences Foundation, 23 Rue des Martyrs, 38000 Grenoble, France
4Laboratoire de Simulation Atomistique (L_Sim), SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, 38054 Grenoble, France
5CEA, DEN, Service de Recherches de Métallurgie Physique, 91191 Gif-sur-Yvette, France
Received 6 December 2011; Accepted 17 January 2012
Academic Editor: Jan Petter Hansen
Copyright © 2012 Normand Mousseau et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Citations to this Article [6 citations]
The following is the list of published articles that have cited the current article.
- Manuel Athe`nes, Mihai-Cosmin Marinica, and Thomas Jourdan, “Estimating time-correlation functions by sampling and unbiasing dynamically activated events,” The Journal of Chemical Physics, vol. 137, no. 19, pp. 194107, 2012.
- Kathleen C. Alexander, “Exploring grain boundary energy landscapes with the activation-relaxation t echnique,” Scripta Materialia, vol. 68, no. 12, pp. 937–940, 2013.
- Jean-Francois Joly, Laurent Karim Béland, Peter Brommer, and Normand Mousseau, “Contribution of vacancies to relaxation in amorphous materials: A kinetic activation-relaxation technique study,” Physical Review B, vol. 87, no. 14, 2013.
- Laurent Karim Béland, and Normand Mousseau, “Long-time relaxation of ion-bombarded silicon studied with the kinetic activation-relaxation technique: Microscopic description of slow aging in a disordered system,” Physical Review B, vol. 88, no. 21, 2013.
- Yue Fan, Yuri N. Osetskiy, and Sidney Yip, “Mapping strain rate dependence of dislocation-defect interactions by atomis tic simulations,” Proceedings of The National Academy of Sciences of The United States of Ame, vol. 110, no. 44, pp. 17756–17761, 2013.
- Pierre-Antoine Geslin, Giovanni Ciccotti, and Simone Meloni, “An observable for vacancy characterization and diffusion in crystals,” The Journal of Chemical Physics, vol. 138, no. 14, pp. 144103, 2013.