Research Article
Silicon-Based Technology for Ligand-Receptor Molecular Identification
Table 1
Ellipsometric measurements of the surface layer thickness after each reaction step.
| Steps | Sample thickness (nm) | 1 | 2 | 3 | 4 |
| Oxide | | 72.4 ± 0.2 | 75.0 ± 0.3 | 75.8 ± 0.4 | APTES + GA | 2.1 ± 0.2 | 3.1 ± 0.3 | 3.1 ± 0.3 | 3.0 ± 0.4 | Protein A | 0.85 ± 0.1 | 0.67 ± 0.08 | 0.75 ± 0.1 | 0.68 ± 0.09 | Spectral range | 500–1600 | 500–1600 | 500–1600 | 500–1600 | | 0.45 | 0.43 | 0.47 | 0.54 |
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1, 2, 3, 4 represents four random microwells of the wafer chosen for chemical and physical characterization.
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