Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films
Figure 6
Cross-sectional scanning electron microscope (SEM) image of galvanic displacement process on the GaAs (100) substrate. Cleaned GaAs (100) sample is immersed in 0.5 mM HAuCl4 for (a) 1 min, (b) 2 min, and (c) 10 min. Scale bars are 90 nm.
