Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films

Figure 8

SEM images of Au thin films deposited in the presence of inorganic acids. Galvanic displacement is conducted for 3 min in 1.0 mM HAuCl₄ solution containing (a) no acid, (b) 0.8 M HCl, (c) 4.6 M H₂SO₄, and (d) 3.3 M HF.

(a)

(b)

(c)

(d)