Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method
Figure 4
Variation of (a) Si–C bond density, (b) Si–H bond density, (c) C–H bond density, and (d) total hydrogen content (CH) as a function of deposition pressure for SiC:H films deposited by HW-CVD method.
