Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method
Figure 7
Typical XPS spectra for SiC:H film deposited at 350 mTorr by HW-CVD method: (a) wide scan, (b) deconvoluted XPS spectra of Si (2p) in the range 96 eV–106 eV, (c) deconvoluted XPS spectra of C (1s) in the range 280 eV–292 eV, and (d) deconvoluted XPS spectra of O (1s) in the range 530 eV–537 eV.
