Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

<table>Variation of dark conductivity and its charge carrier activation energy and photoconductivity as a function of deposition pressure of SiC:H films deposited by the HW-CVD method.</table>

Journal of Coatings

fig9

Figure 9

Figure 9: Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method 