Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method
Figure 2
Structural characteristics of GaN:Mn nanowires grown on Si substrates at different temperatures: (a) 1000°C, (b) 1050°C, (c) 1100°C, (d) 1200°C, (e) 1300°C and (f) 1400°C.