Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

Table 1

The various parameters obtained from the I-V and C-V characteristics of Ir and Ir/Au Schottky contacts on n-InGaN as a function of annealing temperature.

Sample	Schottky barrier height			From I-V	Cheung’s functions
	(SBH) 𝜙𝑏 (eV )				dV/d ln(I) versus I		H(I) versus I
	I-V	C-V	Norde	n	Rs (Ω)	𝑛	𝜙𝑏 (eV )	Rs(Ω)
Ir
As-dep	0.79	1.17	0.81	1.60	188	2.15	0.80	226
300°C	0.85	1.21	0.88	1.10	62	1.38	0.86	74
400°C	0.84	1.11	0.86	1.25	83	1.61	0.85	102
500°C	0.80	1.07	0.82	1.50	122	1.93	0.81	133
Ir/Au
As-dep	0.70	1.00	0.73	1.51	171	1.93	0.71	179
300°C	0.74	1.03	0.76	1.23	90	1.46	0.75	109
400°C	0.71	0.96	0.74	1.43	109	1.89	0.72	128
500°C	0.67	0.93	0.71	1.77	231	2.04	0.68	260