A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Figure 1

Two-layer pattern of MBE InAs layer after Fawcett et al. [2] and our interpretation:  𝑡₁—thin interface layer measuring 1.82 nm in thickness with high charge carrier concentration 𝑛₁ and high FWHM value; (𝑡₂−𝑡₁)—thick bulk layer whose thickness is the difference between the metallurgical thickness 𝑡₂—and defected layer thickness 𝑡₁ with mean charge carrier concentration 𝑛₂.