A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Figure 3

Concentration versus temperature 𝑛-InAs 9.0 μm; 𝑁_𝐴=8.05⋅10¹⁵ cm⁻³, 𝑁_𝐷1=1.26⋅10¹⁶ cm⁻³; 𝑁_𝐷2=8.5⋅10¹⁵ cm⁻³; 𝐸_𝐴=0.005 eV; 𝐸_𝐷1=0.001 eV; 𝐸_𝐷2=0.13 eV; 𝑥_𝐴=4.2⋅10¹⁵ cm⁻³; 𝑥_𝐷=1.2⋅10¹⁵ cm⁻³; 𝐸_𝑥𝐴=0.0008 eV; red bullets: 𝑛_𝐻 experimental data, (1) black line: 𝑛 calculated curve; (2) red line: 𝑛_𝐻 calculated curve [3].