Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 10
Conductance components for InGaAs samples at 200 K.
| No. | Parameter | 200 K | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | 7 μm | 1.0 μm | 1.1 μm | 1 μm |
| 1 | [cm−3] | 4.0 · 1013 | 4.65 · 1015 | 1.04 · 1017 | 1.799 · 1019 | 2 | [cm2/V · s] | 19000 | 12810 | 8514 | 2010.5 | 3 | [1/Ω cm] | 0.122 | 9.54 | 141.85 | 5794 | 4 | | 1 | 1 | 1 | 1 | 5 | [cm−3] | 1.95 · 1014 | 8.0 · 1015 | 8.42 · 1016 | 1.2 · 1018 | 6 | [cm2/V · s] | 18370 | 14400 | 8842 | 3045 | 7 | [1/ cm] | 0.574 | 18.45 | 119.26 | 585 | 8 | | 4.7 | 1.93 | 0.84 | 0.1 | 9 | [cm−3] | −1.85 · 1014 | −2.7 · 1015 | 2.53 · 1016 | 1.68 · 1019 | 10 | [cm2/V · s] | −13400 | −6320 | 1643.3 | 35440 | 11 | [1/ cm] | 0.4 | 2.73 | 6.66 | 95381 | 12 | | 3.28 | 0.29 | 0.047 | 16.46 | 13 | [cm−3] | 3.6 · 1013 | 5.3 · 1013 | 1.38 · 1016 |
*
| 14 | [cm2/V · s] | 64870 | −1840 | −882 |
*
| 15 | [1/Ω cm] | 0.37 | −0.016 | −1.95 |
*
| 16 | | 3.03 | −0.00164 | −0.014 |
*
| 17 | [cm−3] | 4.6 · 1013 | 5.35 · 1015 | 1.233 · 1017 | 1.8 · 1019 | 18 | [S] | 8.54 · 10−5 | 9.54 · 10−4 | 1.56 · 10−2 | 57.94 · 10−2 | 19 | [S] | 4.02 · 10−4 | 1.845 · 10−3 | 1.31 · 10−2 | 5.85 · 10−2 | 20 | [S] | 2.8 · 10−4 | 2.73 · 10−4 | 7.33 · 10−4 | 9.538 | 21 | [S] | 2.59 · 10−4 | −1.6 · 10−6 | −2.145 · 10−4 |
*
| 22 | [S] | 9.41 · 10−4 | 2.12 · 10−3 | 1.36 · 10−2 | 9.59 | 23 | / | 11.02 | 2.22 | 0.872 | 16.55 |
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