Journal of Materials

Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 11

Conductance components for InGaAs samples at 300 K.
No.Parameter300 K
In0.53Ga0.47As In0.53Ga0.47As In0.53Ga0.47As In0.53Ga0.47As
7 μm1.0 μm1.1 μm1.0 μm
1 [cm−3]1.2 · 10146.75 · 10151.13 · 10171.796 · 1019
2 [cm2/V · s]1300082807310.51890
3 [1/Ω cm]0.258.95132.25431
4 1111
5 [cm−3]1.6 · 10141.0 · 10169.76 · 10161.55 · 1018
6 [cm2/V · s]12970840074772970
7 [1/  cm]0.3313.4116.8732
8 1.321.50.880.13
9 [cm−3]−1.45 · 1014−3.32 · 10151.59 · 10161.64 · 1019
10 [cm2/V · s]−6500−3230875.625150
11 [1/  cm]0.151.722.2366076
12 0.60.190.01712.17
13 [cm−3]1.2 · 10146.9 · 10141.72 · 1016 *
14 [cm2/V · s]16936025443 *
15 [1/Ω cm]3.250.002761.22 *
16 13.00.00030.0092 *
17 [cm−3]1.35 · 10147.37 · 10151.135 · 10171.795 · 1019
18 [S]1.75 · 10−48.95 · 10−41.45 · 10−254.31 · 10−2
19 [S]2.31 · 10−41.34 · 10−31.28 · 10−27.32 · 10−2
20 [S]1.05 · 10−41.72 · 10−42.45 · 10−46.608
21 [S]2.275 · 10−32.76 · 10−71.34 · 10−4 *
22 [S]2.61 · 10−31.35 · 10−31.34 · 10−26.68
23 / 14.91.70.9212.3