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Journal of Materials
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Journal of Materials
/
2013
/
Article
/
Tab 12
/
Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 12
Scattering mechanism involved in calculation of GaAs samples properties.
No.
Parameter
GaAs
4.25
μ
m
GaAs
1.7
μ
m
GaAs
2.6
μ
m
GaAs
2.4
μ
m
1
Mobility [cm
2
/V · s]
,
,
,
,
,
,
,
,