Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 2
Main properties of the investigated semiconductors at 300 K.
| Investigated semiconductor | Energy gap [eV] | Intrinsic concentration [cm−3] | Average distance between impurities [Å] | Donor state Bohr radius [Å] | | Donor state ionisation energy [meV] |
| InAs | 0.354 | ~1 · 1015 | 384.5 | 367 | 1.05 | 1.36 | In0.53Ga0.47As | 0.743 | 8.5 · 1011 | 1224.6 | 180 | 6.8 | 2.8 | GaAs | 1.43 | 2.2 · 106 | 809.5 | 104 | 7.8 | 5.25 |
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