A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 4

Scattering mechanism involved in calculation of InAs samples properties.

No.	Parameter	InAs 330; 9.0 μm	InAs 301; 4.7 μm	InAs 298; 5.6 μm	InAs 292; 4 μm
1	Mobility [cm^2/V · s]	𝜏ii, 𝜏𝑝, 𝜏po, 𝜏pie, 𝜏sc	𝜏ii, 𝜏dp,𝜏po, 𝜏pie, 𝜏sc, 𝜏disl	𝜏ii, 𝜏disl	𝜏ii, 𝜏disl