Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 6
Conductance components for InAs samples at 200 K.
| No. | Parameter | 200 K | InAs | InAs | InAs | InAs | 9 μm | 4.7 μm | 5.6 μm | 4 μm |
| 1 | [cm−3] | 3.28 · 1015 | 7.86 · 1015 | 4.68 · 1016 | 4.055 · 1017 | 2 | [cm2/V · s] | 24000 | 21900 | 16600 | 8700 | 3 | [1/Ω cm] | 12.6 | 27.576 | 124.46 | 564. | 4 | | 1 | 1 | 1 | 1 | 5 | [cm−3] | 4.0 · 1015 | 8.12 · 1015 | 3.41 · 1016 | 9.88 · 1016 | 6 | [cm2/V · s] | 23570 | 29849.3 | 17016.3 | 10221 | 7 | [1/ cm] | 15.65 | 27.12 | 92.96 | 162. | 8 | | 1.24 | 0.983 | 0.75 | 0.286 | 9 | [cm−3] | −7.5 · 1014 | −2.49 · 1014 | 1.276 · 1016 | 3.07 · 1017 | 10 | [cm2/V · s] | −4765 | −601.37 | 5692.03 | 31734 | 11 | [1/ cm] | 0.57 | 0.024 | 11.63 | 1559 | 12 | | 0.045 | 0.00087 | 0.093 | 2.76 | 13 | [cm−3] | −9.0 · 1013 | 5.88 · 1014 | −1.54 · 1015 |
*
| 14 | [cm2/V · s] | −621 | 1506.67 | 5758.1 |
*
| 15 | [1/Ω cm] | 0.009 | 0.142 | −1.42 |
*
| 16 | | 0.0007 | 0.00515 | −0.0011 |
*
| 17 | [cm−3] | 3.16 · 10−15 | 8.46 · 1015 | 4.5 · 1016 | 4.058 · 1017 | 18 | [S] | 1.134 · 10−2 | 1.3 · 10−2 | 6.97 · 10−2 | 22.56 · 10−2 | 19 | [S] | 1.41 · 10−2 | 1.27 · 10−2 | 5.2 · 10−2 | 6.48 · 10−2 | 20 | [S] | 5.13 · 10−4 | 1.13 · 10−5 | 6.5 · 10−3 | 62.36 · 10−2 | 21 | [S] | 8.1 · 10−6 | 6.67 · 10−5 | −7.95 · 10−4 |
*
| 22 | Σ [S] | 1.45 · 10−2 | 1.28 · 10−2 | 5.77 · 10−2 | 68.84 · 10−2 | 23 | / | 1.28 | 0.98 | 0.83 | 3.05 |
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