Research Article

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Table 6

Conductance components for InAs samples at 200 K.

No.Parameter200 K
InAs InAs InAs InAs
9 μm4.7 μm5.6 μm4  μm

1 [cm−3]3.28 · 10157.86 · 10154.68 · 10164.055 · 1017
2 [cm2/V · s]2400021900166008700
3 [1/Ω cm]12.627.576124.46564.
4 1111
5 [cm−3]4.0 · 10158.12 · 10153.41 · 10169.88 · 1016
6 [cm2/V · s]2357029849.317016.310221
7 [1/  cm]15.6527.1292.96162.
8 1.240.9830.750.286
9 [cm−3]−7.5 · 1014−2.49 · 10141.276 · 10163.07 · 1017
10 [cm2/V · s]−4765−601.375692.0331734
11 [1/  cm]0.570.02411.631559
12 0.0450.000870.0932.76
13 [cm−3]−9.0 · 10135.88 · 1014−1.54 · 1015 *
14 [cm2/V · s]−6211506.675758.1 *
15 [1/Ω cm]0.0090.142−1.42 *
16 0.00070.00515−0.0011 *
17 [cm−3]3.16 · 10−158.46 · 10154.5 · 10164.058 · 1017
18 [S]1.134 · 10−21.3 · 10−26.97 · 10−222.56 · 10−2
19 [S]1.41 · 10−21.27 · 10−25.2 · 10−26.48 · 10−2
20 [S]5.13 · 10−41.13 · 10−56.5 · 10−362.36 · 10−2
21 [S]8.1 · 10−66.67 · 10−5−7.95 · 10−4 *
22Σ [S]1.45 · 10−21.28 · 10−25.77 · 10−268.84 · 10−2
23 / 1.280.980.833.05