Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 7
Conductance components for InAs samples at 300 K.
| No. | Parameter | 300 K | InAs | InAs | InAs | InAs | 9 μm | 4.7 μm | 5.6 μm | 4 μm |
| 1 | [cm−3] | 4.18 · 1015 | 9.62 · 1015 | 4.97 · 1016 | 4.09 · 1017 | 2 | [cm2/V · s] | 16000 | 15800 | 14580 | 8400 | 3 | [1/Ω cm] | 10.7 | 24.35 | 116.08 | 550 | 4 | | 1 | 1 | 1 | 1 | 5 | [cm−3] | 5.62 · 1015 | 8.13 · 1015 | 4.27 · 1016 | 1.45 · 1017 | 6 | [cm2/V · s] | 16240 | 15611 | 14565.7 | 9090 | 7 | [1/ cm] | 14.6 | 20.33 | 99.64 | 211 | 8 | | 1.36 | 0.835 | 0.858 | 0.38 | 9 | [cm−3] | −1.43 · 1015 | −7.56 · 1014 | 7.073 · 1015 | 2.64 · 1017 | 10 | [cm2/V · s] | −4430 | −1109.67 | 2275.6 | 16535 | 11 | [1/ cm] | 1.01 | 0.134 | 2.58 | 698 | 12 | | 0.095 | 0.0055 | 0.022 | 1.27 | 13 | [cm−3] | 4.5 · 1014 | 1.862 · 1015 | −1.51 · 1015 |
*
| 14 | [cm2/V · s] | 1965 | 3636.22 | 2302.22 |
*
| 15 | [1/Ω cm] | 0.14 | 1.085 | −0.56 |
*
| 16 | | 0.013 | 0.0445 | −0.048 |
*
| 17 | [cm−3] | 4.64 · 1015 | 9.24 · 1015 | 4.83 · 1016 | 4.09 · 1017 | 18 | [S] | 9.63 · 10−3 | 1.145 · 10−2 | 6.5 · 10−2 | 22.0 · 10−2 | 19 | [S] | 1.314 · 10−2 | 9.55 · 10−3 | 5.58 · 10−2 | 8.44 · 10−2 | 20 | [S] | 9.09 · 10−4 | 6.3 · 10−5 | 1.44 · 10−3 | 27.92 · 10−2 | 21 | [S] | 1.26 · 10−4 | 5.1 · 10−4 | 3.14 · 10−4 |
*
| 22 | [S] | 1.417 · 10−2 | 1.012 · 10−2 | 5.75 · 10−2 | 36.36 · 10−2 | 23 | / | 1.47 | 0.88 | 0.88 | 1.65 |
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