Research Article
A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device
Table 9
Conductance components for InGaAs samples at temperatures of 10 K and 70 K.
| | No. | Parameter | 10 K | 70 K | | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | | 7 μm | 7 μm | 1.0 μm | 1.1 μm | 1.0 μm |
| | 1 | [cm−3] | 1 · 1013 | 1.2 · 1013 | 2.66 · 1015 | 1.095 · 1017 | 1.8 · 1019 | | 2 | [cm2/V · s] | 6000 | 38000 | 48835 | 4086.1 | 1770.3 | | 3 | [1/Ω cm] | 0.01 | 0.073 | 20.8 | 71.6 | 50.98 | | 4 | | 1 | 1 | 1 | 1 | 1 | | 5 | [cm−3] | 9.5 · 1013 | 1.5 · 1013 | 2.4 · 1015 |
*
|
*
| | 6 | [cm2/V · s] | 815 | 37300 | 98000 |
*
|
*
| | 7 | [1/ cm] | 0.0124 | 0.09 | 37.67 |
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|
*
| | 8 | | 1.24 | 1.22 | 1.8 |
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|
*
| | 9 | [cm−3] | 2.0 · 1012 | 0.0 | 4.92 · 1014 |
*
|
*
| | 10 | [cm2/V · s] | −730 | −7650 | −78000 |
*
|
*
| | 11 | [1/ cm] | −0.00023 | 0.0 | −6.15 |
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|
*
| | 12 | | −0.023 |
*
| −0.295 |
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|
*
| | 13 | [cm−3] | 0.0 | 8 · 109 | 3.45 · 107 |
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|
*
| | 14 | [cm2/V · s] | −720 | −6710 | −53100 |
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|
*
| | 15 | [1/Ω cm] |
*
| −0.000009 | −2.93 · 10−7 |
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|
*
| | 16 | |
*
| 0.000123 | −1.41 · 10−8 |
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|
*
| | 17 | [cm−3] | 9.7 · 1013 | 1.5 · 1013 | 2.892 · 1015 |
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|
*
| | 18 | [S] | 7 · 10−6 | 5.11 · 10−5 | 0.00208 | 7.88 · 10−3 | 5.098 · 10−3 | | 19 | [S] | 8.68 · 10−6 | 6.3 · 10−5 | 0.0038 |
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|
*
| | 20 | [S] | −1.61 · 10−7 | 0 | −6.15 · 10−4 |
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|
*
| | 21 | [S] |
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|
*
|
*
|
*
|
*
| | 22 | [S] | 8.52 · 10−6 | 6.3 · 10−5 | 0.003185 |
*
|
*
| | 23 | / | 1.22 | 1.235 | 1.53 |
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*
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