Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Table 1

NW growth rate for different Si doping levels.

TSi(^∘C)	Equivalent 2D	NW average	NW growth
	doping (cm^−3)	length (𝜇m)	rate (nm/min)
closed	undoped	2.7	119
1040	3×10^17	2.57	112
1070	5×10^17	2.53	110
1100	1.1×10^18	2.53	110
1150	3.7×10^18	1.2	44