Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Table 2

Resistivity of inhomogeneously doped NWs.

Contacts i-j	Diameter (nm)	Separation (nm)	Resistance 𝑟𝑖𝑗(Ω)	Resistivity (Ω cm)	Error margin
1-2	70	460	110	9.5×10^−5	∼20%
2-3	60	510	200	1.2×10^−4	∼20%
3-4	40	425	2100	6.3×10^−4	∼20%