Analysis of CNT Bundle and Its Comparison with Copper Interconnect for CMOS and CNFET Drivers

<table>Kinetic inductance versus process parameters (<svg height="11.175" id="M50" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 13.775 11.175" width="13.775" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>, <svg height="11.3125" id="M51" style="vertical-align:-0.1092pt" version="1.1" viewbox="0 0 11.075 11.3125" width="11.075" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>, and <svg height="7.9499998" id="M52" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 7.3000002 7.9499998" width="7.3000002" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path d="M393 379q-9 -16 -28 -29q-15 -10 -23 -2q-19 19 -36 19q-21 0 -52 -38q-57 -72 -82 -126l-40 -197q-23 -3 -75 -18l-7 7q49 196 74 335q7 43 -2 43q-7 0 -30 -14.5t-47 -37.5l-16 23q37 42 82 73t67 31q41 0 15 -113l-11 -50h4q41 71 85 117t77 46q29 0 45 -26
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</svg>).</table>

Journal of Nanomaterials

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Figure 4

Figure 4: Analysis of CNT Bundle and Its Comparison with Copper Interconnect for CMOS and CNFET Drivers 