Memory and Spin Injection Devices Involving Half Metals
Figure 5
Configuration for a device made of a cubic half-metallic layer (HML) depicted in blue. The active ferromagnetic layer is shown in orange, the hard ferromagnetic pinned layer is shown in green, and the antiferromagnetic pinning layer is shown in light green. (a) Without a gate voltage, the magnetization of the active layer aligns with the pinned layer magnetization in -direction. (b) When the gate voltage is applied across the HM layer in the -direction, the spin-polarized electrons are forced toward the bottom surface due to the anomalous Hall effect, thereby increasing the magnetization along the bottom surface of the HM layer by the amount . The increased magnetization in the -direction next to the top surface of the active layer causes the active layer magnetization to flip to the -direction.
