Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

Table 2

Results of the analysis of Raman spectra: crystalline fraction, bond angle deviation, nanocrystalline Si peak shift, and calculated crystallites average size for samples deposited with different 𝑅=Fr[SiH₂Cl₂]/Fr[H₂] and RF powers. The crystallites average size measured by HRTEM is included for comparison.

	RF power (W)	Crystalline fraction (%)	Bond angle deviation Δ𝜃𝑏 (°)	c-Si shift Δ𝜔(cm^−1)	Calculated size by model (nm)	HRTEM size (nm)
𝑅=0.1	10	18.1	10.0	12.3	2.7 ± 0.5	2.4 ± 0.4
	25	19.0	8.5	14.2	2.5 ± 0.5	2.6 ± 0.5
	50	27.4	8.1	9.0	3.1 ± 0.5	2.8 ± 0.8
	100	22.1	8.6	14.0	2.5 ± 0.5	2.8 ± 1.0
	150	21.9	8.5	7.4	3.4 ± 0.5	4.2 ± 1.6
𝑅=0.05	10	13.1	7.8	14.8	2.4 ± 0.5	2.5 ± 1.2
	25	26.6	8.7	8.6	3.2 ± 0.5	3.7 ± 1.6
	50	53.9	7.3	8.8	3.2 ± 0.5	3.9 ± 1.7
	100	12.3	7.6	5.0	4.2 ± 0.5	4.3 ± 2.0
	150	25.0	8.2	4.4	4.5 ± 0.5	2.9 ± 1.3