Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography
Figure 5
The SEM images of the nanopap structure after etching with BOE solution at the end of each thermal oxidation. Shown are the polysilicon layer at the end of the first to seventh cycles with 15 min of oxidation, from (a) to (g); 7th cycle with 10 min (h), and 5 min (i), of thermal oxidation.
