Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires

Figure 2

Controllability of bending technique: measured separation between points a and b in SEM for hexapod InAs. (a) 237 nm; (b) 322 nm; (c) 413 nm; (d) 500 nm; (e) 650 nm; (f) 850 nm; (g) 970 nm. The nanowires here are approximately 40 nm in diameter and 2.5–3 um in length.

(a)

(b)

(c)

(d)

(e)

(f)

(g)