Atomic-Level Investigation of CH_𝑥 and C₂H_𝑥 Adsorption on 𝛽-SiC (111) Surface for CVD Diamond Growth from DFT Calculations

Table 3

The difference in total energy between C adsorption and the other CH_x adsorption on Si- and C-terminated surfaces.

Species	Si-terminated surface (eV)	C-terminated surface (eV)
CH	−17.9042	−17.0661
CH2	−35.4609	−34.5021
CH3	−52.3329	−51.4378